Visualizing Orientation Controlled Interface and Interlayer Electron/Exciton-Phonon Coupling in the MoS₂/MoTe₂ Nanoheterostructure for Photoelectric Conversion

Semiconducting 2D layered transition metal dichalcogenides (TMDs) and TMD heterostructures have attracted much attention in porous materials because of their unique electrical and optical properties. However, the role of controlled epitaxial growth and strain in the interfacial electron transfer and nonlinear optical (NLO) conversion efficiency of the TMD/TMD nanoheterostructure remains poorly understood. Herein, we have successfully synthesized a MoS2/MoTe2 nanoheterostructure with excellent photoelectric and NLO properties. The designed MoS2/MoTe2 nanoheterostructure exhibits excellent NLO performance, including a high nonlinear absorption (NLA) coefficient of 10(-7) cm/W at the pulse energy of 5 mu J, which is attributed to the enhanced light absorption capacity of MoTe2 and the modulation of interlayer carrier diffusion. Based on the synergistic effects of optimization strain and interface engineering, an in-depth analysis was conducted on the effects of surface modification on the photoelectrochemical (PEC) performance optimization of the MoS2/MoTe2 nanoheterostructure. The synergistic effect of strain and the interface can promote the continuous transfer of electrons between MoTe2 and MoS2. This work studied the visualization control interface and interlayer electron/exciton phonon coupling in van der Waals MoS2/MoTe2, providing some inspiration for achieving good NLO conversion efficiency and efficient PEC anode materials.