Design considerations for engineering $$\hbox {HfS}_2$$ negative capacitance FET through multilayered channel and $$\hbox {Hf}_{1-x}{\hbox {Zr}_{x}}\hbox {O}_2$$/$$\hbox {HfO}_2$$ double-gate stacks: an ab initio and NEGF study
Journal of Computational Electronics（2023）
关键词
negative capacitance fet,double-gate
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