Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation

Using the mathematical modeling of a displacement cascade in two wide-gap semiconductors based on gallium, gallium oxide (Ga2O3), and gallium nitride (GaN), the features of the generation of Frenkel pairs during the scattering of protons with energies of 8 and 15 MeV are considered. The number of displacements created not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades is calculated for the first time. Calculations show that under the proton irradiation of Ga2O3, for example, the fraction of vacancies in the oxygen sublattice created directly by protons is only 12