Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

•Laser slicing and laser polishing are combined for realizing the efficient separation and planarization of 4H-SiC crystals.•Superior material utilization and damage defect suppression have been obtained by the hybrid laser processes.•Enriches the mechanism of laser internal modification and laser polishing.•The surface roughness Sa of 4H-SiC after laser polishing reached 0.22 µm, and an amorphous phase and 3C-SiC phase appeared in the polished layer.