Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications

The temperature-dependent electroluminescent properties of Ge-Diodes, especially the Ge-Zener-Emitter, with tunnel transitions are investigated. The direct band-gap behavior of Germanium below a temperature of 140 K is demonstrated, facilitated by Zener tunneling. Pulsed excitation of the Ge-Zener-Emitter results in an optical output power density of 6 mu W, which is sufficient to excite quantum dots for single-photon emission. The peak energy of 0.86 eV suits the non-resonant excitation of InGaAs quantum dots at cryogenic temperatures. This paper presents a potential optical pump source for a quantum photonic integrated circuit.