Effect of in layer thickness on the photoelectric properties of indium tin oxide (ITO)/In/ITO multilayer films

Indium Tin Oxide (ITO)/In/ITO films were fabricated using direct current magnetron sputtering technology to investigate the impact of the indium film on their photoelectric properties. The electrical performance analysis demonstrates a resistivity of 6.830 x 10-4 omega & sdot;cm and an average transmittance of the thin film of 89.5 % when the thickness of the indium layer is 12 nm. The ITO/In (12 nm)/ITO configuration exhibited the highest Figure of Merit of approximately 101.09 x 10-3 omega-1. ITO and In share a similar interface, which promotes carrier mobility without causing light reflection, thereby enhancing transmittance. Based on resistivity, carrier concentration, and mobility, it is evident that sputtering the In layer can enhance the electrical properties of the ITO film.