g-C3N4/TiO2-X heterojunction with high-efficiency carrier separation and multiple charge transfer paths for ultrasensitive SERS sensing

Chinese Chemical Letters(2023)

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摘要
The combination of interface engineering and defect engineering is a promising strategy for developing new semiconducting surface-enhanced Raman scattering (SERS) substrate. Herein, an organic/inorganic hybrid g-C3N4/TiO2-X heterojunction with synchronous generation of strong interface effect and abundant surface oxygen vacancy (OV) defect was prepared by a simple sol-hydrothermal procedure with a help of urea. Due to the improved substrate-to-molecule charge transfer (CT) from joint contribution of high-efficiency carrier separation induced by strong interface coupling effect and multiple CT paths derived from abundant surface OV, g-C3N4/TiO2-X substrate exhibits greatly enhanced SERS effect for non-resonant 4-mercaptobenzoic acid (4-MBA) probe. The enhancement factor of g-C3N4/TiO2-X substrate for 4-MBA is as high as 5.57×106, and the substrate exhibits ultra-high stability and excellent spectral reproducibility. More meaningfully, the developed g-C3N4/TiO2-X heterojunction can be used to execute an ultrasensitive detection for antibiotic residues in real water system, even comprehensive evaluation of multi-component residues.
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关键词
SERS,Semiconductor,Heterojunction,Surface defect,Detection
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