A Study of POCl3 Deposition Reaction Rate with Residual Gas Analysis Method

Real-time process monitoring technology is needed to detect and diagnose abnormal changes in manufacturing process equipment and products. This study proposes the possibility of real-time process monitoring by in-situ monitoring the change of residual gas emitted during the thin film deposition process through chemical vapor deposition technique through residual gas analyzer (RGA). RGA monitoring allows immediate identification of abnormal conditions in the thin film deposition process. To this end, PSG thin films were deposited using industrial CVD equipment. According to the change in gas inflow, the composition ratio of exhaust gas was confirmed by RGA. The reaction rate according to the gas amount was obtained from the composition ratio of the exhaust gas, and the thin film deposition rate was obtained from this.