Drying Effects Upon Spin Coating of Solution-Processed Amine-Thiol Thin Film Cu(In,Ga)(S,Se)₂ Absorber Fabrication

This paper utilises solution-processed spin coating of CIGS precursor solutions in order to fabricate thin film PV absorbers (1-2 mu m thick) in air. Opto-electronic properties of the device have been shown to improve under post-spin air annealing of the precursor film, due to removing carbon in the bulk of the film, left by improperly dried amine-thiol-based solvents used for the absorber. A champion device was reached for a 20min postspin anneal time in air, yielding a best cell J(sc) of 26.4mA/cm(2), a V-oc of 587mV and an efficiency of 10.1%.