Red phosphorus/WSe 2 heterojunction based self-powered UV photodetector

This letter reports Al/Red Phosphorus (RP)/WSe 2 /ITO heterostructure based self-powered UV photodetector designed by low-cost solution technique. The p–n junction is formed between p-type WSe 2 and n-type red phosphorus (RP) material deposited over ITO coated PET substrate. The designed photodetector device shows Responsivity R_s (A/W) of 0.23 and 0.12 (voltage bias 2 V) at 300 nm and 350 nm wavelength, respectively. The rise and fall time of the device are obtained as 0.19 µs and 0.12 µs in UV region.