Side-amorphous-silicon-grating InGaAs/GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate

A compact III-V semiconductor laser is regarded as a promising light source for the silicon photonic platform due to its unique advantages of low energy consumption and small footprint. However, the significant lattice mismatch between the III- V material and silicon is a fundamental challenge for the monolithic integration of III-V lasers on silicon substrates and requires specific integration solutions to confined relaxation defects outside the active device region. Here, a distributed feedback GaAs/InGaAs nano-ridge laser directly grown on silicon substrate by nano-ridge engineering is demonstrated. Under pulse pumping, the lasing was achieved with a cavity length as small as 50 $\mu\mathrm{m}$ . This laser establishes a novel route to realize a compact light source for the future high-density and massively scalable silicon photonic integrated circuits.