Properties of a highly compensated high-purity germanium

The electrical and optical properties of a compensated high-purity germanium (HPGe) single crystal was investigated using various characterization techniques. Aluminium, boron, and phosphorus were the major residual shallow-level impurities identified by photothermal ionization spectroscopy (PTIS). Hall effect measurements performed at low temperatures (77 K) along the growth length reveal that the crystal is p -type at the top and bottom, while n -type in the middle part with a net carrier concentration in the range of 10 10 –10 11 cm −3 . The obtained very high resistivity (2.3 ⨯ 10 8 Ω·cm) at 91 K in the temperature-dependent Hall measurements (TDH) at the bottom part of the crystal indicates a high level of compensation (84