Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

A physics-based analytical dc compact model for single back-gated MoS2 field effect transistors (FETs) is presented. The model is developed by calculating the charge inside the 2-D layer which is expressed in terms of the Lambert W function that recently has become the standard in SPICE simulators. The current is then calculated in terms of the charge densities at the drain and source ends of the channel. A new mobility model is presented to account for the observed superlinear current increase above a certain gate voltage. Despite the simplicity of the model, it shows very good agreement with the experimental data as well as the possibility to be extended to model the double-gate MoS2 FETs.