Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

In this article, we demonstrate highperformance reverse blocking GaN high-electron-mobility transistors (HEMTs) with a recessed-drain structure on AlGaN/GaN/AlGaN double heterostructure. By using a low damage recessed-drain structure, the turn-on voltage (VON) as small as 0.35 V is achieved. Furthermore, owing to enhanced carrier confinement, a low subthreshold swing (SS) of 63 mV/decade and a high I-ON/I(OFF )ratio of 10(10) are attained. Meanwhile, the threshold voltage shift is less than 0.15 V under the gate bias stresses of -20, -10, and 2 V. The fabricated devices show an excellent gate-bias-induced threshold voltage stability. Furthermore, the proposed devices present a high forward breakdown voltage (VFBR) of 2732 V, a high reverse breakdown voltage (V-RBR) of -2764 V, and a low reverse leakage current (I-R) of 0.6 nA/mm at V-DS = -2500 V. The forward and reverse power figures-of-merits (FOMs) of the fabricated devices are 526 and 538 MW/cm(2), respectively, which are the highest among all existing GaN HEMTs with reverse blocking capability.