Exploring Non-Stoichiometric SiOx Thin Film for Non-Volatile Memory Application

Rubila Laishram,Mir Waqas Alam,Basma Souayeh,Naorem Khelchand Singh

JOURNAL OF ALLOYS AND COMPOUNDS（2024）

Natl Inst Technol Nagaland | King Faisal Univ

Cited 5|Views16

Abstract

This article explores the electrical performance of capacitive memory and resistive switching (RS) devices based on thin films of a single active layer of Silicon oxide (SiOx). The fabricated device Au/SiOx/p-Si displayed frequency-dependent characteristics ranging from 200 kHz to 1 MHz w.r.t capacitance. The charge trapping nature was also investigated, which revealed a charge storage density (N) of order 10(10) cm(-2) and a low trapping density of interface (D-it) similar to 2.65 x 10(11) eV(-1) cm(-2). Furthermore, the device exhibits bipolar RS behavior while maintaining a stable endurance for 1000 DC sweeping cycles and a good retention period of > 10(3) s. The major pathway of the conduction mechanism in these devices is attributed to the accumulation of oxygen vacancies near the Au/SiOx interface. The conduction in this device is predominantly governed by trap-mediated space-charge-limited current (SCLC) and ohmic conductions.

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Key words

Capacitive memory,Resistive switching,Forming-free,Oxygen vacancies,Silicon oxide thin film

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