Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 degrees C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.