Investigation of Highly Efficient Dual-Band Photodetector Performance of Spin-on-Doping (SOD) Grown p-Type Phosphorus Doped ZnO (P:ZnO)/n-Ga $_{\text{2}}$ O $_{\text{3}}$ Heterojunction Device
IEEE Transactions on Electron Devices(2023)
摘要
We developed a stable and reproducible p-type P:ZnO thin film using a cost-effective solution-derived spin-on-doping (SOD) technique. We created a pure p-n heterojunction by depositing a highly transparent Ga
$_{\text{2}}$
O
$_{\text{3}}$
thin film on P:ZnO for photodetector applications. The films’ surface morphology and thickness were analyzed using AFM and FEGSEM. At the same time, UV-visible (UV–Vis) and PL spectroscopy were employed to investigate their optical properties, including absorption, energy bandgap, and defect-related carrier transitions. The resulting P:ZnO/Ga
$_{\text{2}}$
O
$_{\text{3}}$
heterojunction demonstrated excellent photo-response performance, with a responsivity of 4.76 A/W, detectivity of 10.13
$\times$
10
$^{\text{12}}$
Jones, and rapid response speed. The device exhibited sensitivity to UV-C and UV–Vis wavelength regions, showcasing its potential for high-performance, dual-band, and low-power photodetectors.
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关键词
Dual band photodetector,Ga $_{\text{2}}$ O $_{\text{3}}$,heterojunction,p-type ZnO,phosphorus doping
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