CMOS-Compatible Barometric Pressure Field-Effect Transistor-Type Sensor

In this work, we propose a metal -oxidesemiconductor field-effect transistor -based barometric pressure sensor having a p -type buried channel, air gap, and air capacitor. The proposed sensor demonstrates a linear 8 -fold response when decreasing atmospheric pressure from 740 Torr to 250 Torr, offering the advantages of compact size and low power consumption. The low -frequency noise characteristics and temperature dependency of the sensor are investigated to further demonstrate the sensor performance.