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Enhanced Electron Transport at the N+ Poly-Si/LiF/Al Interface in N-Topcon Silicon Solar Cells

IEEE journal of photovoltaics(2024)

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摘要
lithium fluoride (LiF) film has been employed as an electron-selective contact in optoelectronic devices. In this study, the effect of rapid thermal processing (RTP) on n-type tunnel oxide passivated contact (n-TOPCon) silicon solar cells using LiF/Al as the electrodes was investigated. Enhanced electron transport at the n + poly-Si/LiF/Al interface of n-TOPCon solar cells after RTP was observed. X-ray photoelectron spectroscopy studies revealed that Li nanoscale metal and Al-F chemical bonds had been formed after RTP, indicating that chemical reaction between LiF and Al had occurred. Nanometer-sized Li metal accumulating at the n + poly-Si/LiF/Al interface resulted in a decreased work function, which would enhance the surface band bending of n + poly-Si. The synergistic effect of the enhanced band bending and Al-F bonds enhanced electron transfer. After RTP at 400 °C, the solar cell fill factor (FF) was increased from 77.1% to 80.9% and the cell efficiency was increased from 20.3% to 21.5%. The increased FF and cell efficiency were ascribed to the decreased series resistance, which was dramatically decreased from 1.33 Ω·cm 2 to 0.86 Ω·cm 2 .
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关键词
Photovoltaic cells,Silicon,Metals,Conductivity,Plasma temperature,Photovoltaic systems,Electrodes,Electron transport,lithium fluoride,rapid thermal processing,tunnel oxide passivated contact (TOPCon) solar cell
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