A 52–73-GHz LNA With Tri-Coupled Transformer for $G_{m}$ Boosting and Enhanced Noise Canceling

Jiacong Ke, Zetian Lin,Guangyin Feng,Yanjie Wang

IEEE Journal of Solid-State Circuits(2024)

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摘要
This article presents a broadband low-noise amplifier (LNA) based on tri-coupled transformer (XFMR) for G $_{m}$ boosting and enhanced noise canceling (NC). In contrast to conventional NC structures, the proposed design uses the combination of a single transistor and a tri-coupled XFMR innovatively to achieve noise reduction, G $_{m}$ boosting, as well as wideband matching, simultaneously. Fabricated in a 40-nm CMOS process, the LNA achieves a 3-dB bandwidth of 22.1 GHz from 51.6 to 73.7 GHz, a peak gain of 22.4 dB, a minimum NF of 3.8 dB, and an average IP1dB of $-$ 12 dBm with a dc power consumption of 34 mW.
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关键词
CMOS,G $_{m}$ boosting,low-noise amplifier (LNA),millimeter-Wave (mmW),noise canceling (NC),tri-coupled transformer
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