A Design of Low Noise InP HEMT LNA based on device modeling.

In this paper, we propose an InP HEMT low noise amplifier that can be used in the n79 band. In order to use an undefined InP HEMT in the design, ASM-HEMT Modeling is adopted to create a model for the active component. In addition, the model is completed to improve the accuracy of the noise parameter through source-pull measurement. The proposed LNA is off-matched into a single stage using InP HEMT transistors, a low-noise compound semiconductor, and passive components from Murata. It can be used in systems that require a low noise figure in the n79 band. Measurements confirm that the fabricated LNA has a noise figure characteristic of 0.52 dB or less in the 4.4 GHz - 5.0 GHz band.