Spatially Resolved High Voltage Kelvin Probe Force Microcopy: A Novel Avenue for Examining Electrical Phenomena at Nanoscale
arxiv(2024)
摘要
Kelvin probe microscopy (KPFM) is a well-established scanning probe
technique, used to measure surface potential accurately; it has found extensive
use in the study of a range of materials phenomena. In its conventional form,
KPFM frustratingly precludes imaging samples or scenarios where large surface
potential exists or large surface potential gradients are created outside the
typical +/-10V window. If the potential regime measurable via KPFM could be
expanded, to enable precise and reliable metrology, through a high voltage KPFM
(HV-KPFM) adaptation, it could open up pathways towards a range of novel
experiments, where the detection limit of regular KPFM has so far prevented the
use of the technique. In this work, HV-KPFM has been realised and shown to be
capable of measuring large surface potential and potential gradients with
accuracy and precision. The technique has been employed to study a range of
materials (positive temperature coefficient of resistivity ceramics, charge
storage fluoropolymers and pyroelectrics) where accurate spatially resolved
mapping of surface potential within high voltage regime facilitates novel
physical insight. The results demonstrate that HV-KPFM can be used as an
effective tool to fill in existing gaps in surface potential measurements while
also opening routes for novel studies in materials physics.
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