DFT-based Computational Investigations of the Structural, Electronic, Elastic, and Magnetic Properties of Ternary Half-Heusler TiVX (X= Ge, Si, Pb, Sn) Compounds

•We describe the Half-Heuslers compounds TiVX (X= Ge, Si, Pb, Sn) by utilizing DFT•Hubbard U-terms for coulombs potential in GGA+U•Structural, elastic, magnetic, and electronic calculated•these compounds are showing semiconducting behavior in spin-up configuration,•The narrow band gap above Fermi level, shows N-type semiconducting nature.