Effect of Compositionally Co-Related and Orderly Varying Indium Molar Content on the Performance of in 0.15 Ga 0.85 N/In X Ga (1−x) N Laser Diode Structure

In this paper, increasing indium composition ‘x’ in quantum barriers of In0.15Ga0.85N/InxGa(1-x)N based laser diode structure is proposed. The paper analyses the effect of molar composition of indium in quantum barrier and geometrical variation of barrier thickness. Observations related to laser power characteristics, material strain, band diagram analysis and carrier density has been carried out in the modified structures. Laser power has experienced an increment from 126 mW to 172 mW in proposed laser diode structure as compared to the reference structure. The optical confinement factor of the active region has improved from 0.94