Effect of Heavy Ion Irradiation on SiC MOSFET Dynamic Parameter

To evaluate the effect of heavy-ion irradiation on SiC MOSFET dynamic parameters, the gate charges of SiC MOSFET were tested. The change of the gate charges induced by heavy-ion was simulated by TCAD The gate-to-source charges QGS increased and the gate-to-drain charges QGD decreased. It was concluded that the change of gate charge was related to the acceptor traps induced by heavy ions in the JFET neck region. The traps induced by heavy-ion would degrade reliability of devices.