GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks.

This study is focused on the modeling of an active electronic device based on the gallium-nitride (GaN) semiconductor technology by using an optimization-based procedure. Gated recurrent units (GRUs) are used to build the device model for predicting the scattering (S-) parameter measurements. By comparing measurements and simulations under different operating conditions, it is found that the extracted GRU-based model can faithfully reproduce the frequency- and temperature-dependent performance of the studied power device. In addition, the proposed modeling method is used to analyze and model the magnitude of the short-circuit current gain (h 21 ).