A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
arxiv(2024)
摘要
The use of metal van der Waals contacts and the implicit reduction in
Fermi-level pinning in contacted semiconductors has led to remarkable device
optimizations. For example, using graphene as an electrical contact allows for
tunable Schottky barriers in transistors and barristors. In this study, we
present a double Schottky barrier model and apply it to barrier tunable all van
der Waals transistors. In a molybdenum disulfide (MoS_2) transistor with
graphene and few-layer graphene contacts, we find that the model can be applied
to extract Schottky barrier heights that agree with the Schottky-Mott rule from
simple two-terminal current-voltage measurements at room temperature.
Furthermore, we show tunability of the Schottky barrier in-situ using
a regional contact gate. Our results show that a basic back-to-back diode
model, applied to two terminal measurements, can capture the diode properties
of all-van-der-Waals transistors relatively well.
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