A Sub-100nA Ultra-low Leakage MCU Embedding Always-on Domain Hybrid Tunnel FET-CMOS on 300mm Foundry Platform

Yaoru Hou,Kaifeng Wang, Chenxing Liu-Sun, Jianfeng Hang,Xinfang Tong,Chunyu Peng,Yongqin Wu,Ye Ren,Weihai Bu,Xin Si,Bo Liu,Xiulong Wu,Jun Yang,Hao Cai,Qianqian Huang,Ru Huang

2023 International Electron Devices Meeting (IEDM)（2023）

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Abstract

This work firstly demonstrates an ultra-low leakage microcontroller unit (MCU) based on 55nm tunnel FET (TFET) -CMOS hybrid 300mm foundry platform. By utilizing the large I ON and record high I ON /I OFF ratio of the dopant segregation TFET (DS-TFET), a 1Kbit TFET-Gated-Ground static random access memory (TGG-SRAM) is implemented in MCU always-on domain. A voltage-stacking scheme is proposed to regulate the supply voltage. Experimental results show that TGG-SRAM and TFET-MCU obtain order of magnitude standby power reduction, cost 6nA (data retention) and 75nA (deep-sleep mode) leakage current respectively, indicating the great potential of the TFET-CMOS hybrid platform for cutting-edge power-dieting MCU.

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Key words

Ultralow Leakage,Random Access Memory,Large Ion,Data Retention,Microcontroller Unit,Static Random Access Memory,Power Consumption,Control Unit,Tunnel Junction,Performance Penalty,Sleep Mode,Peripheral Circuits,CMOS-based,Silicide,Standard CMOS,Protection Circuit

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