Modeling of a high gain two stage pHEMT LNA using ANN with Bayesian regularization algorithm

This paper presents novel way to achieve fast and accurate Artificial Neural Network (ANN) modeling of Radio Frequency (RF) front end Low Noise Amplifier (LNA). Multilayer perceptron neural network is implemented to model high gain, ultra-low noise pseudomorhic High Electron Mobility Transistor (pHEMT) based LNA. Datasets are developed for input and output that is obtained from the Electro-Magnetic simulator. Different neural networks such as PatternNet, FitNet, and CascadeForwardNet with different algorithms are trained, tested, and compared to learn the behavior of the amplifier, and the best model is analyzed. Neural networks are modeled for LNA S-parameters and NF. It is observed that greater than 99% accuracy is achieved for PatternNet Bayesian regularization algorithm with less number of hidden layers and also it is found that the simulation results are almost similar to the developed ANN.