Cu Pumping Analysis During $Cu / {SiO}_{2}$ Hybrid Bonding Using In-Situ SPM Imaging

Ali Roshanghias,Jaroslaw Kaczynski,Ude Hangen

2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC)（2023）

Silicon Austria Labs GmbH | Bruker Nano GmbH

Cited 0|Views4

Abstract

The assessment of Cu pumping (also known as Cu extrusion) during thermal annealing is vital information for the successful execution of hybrid bonding as well as defect-free processing of the through silicon vias (TSV). Unpredicted Cu pumping can pose major reliability issues. Correspondingly, in this study, high-temperature analysis of Cu pumping was conducted utilizing in-situ scanning probe microscopic (SPM) imaging. Cu /

{SiO}_{2}

surfaces with recessed and protruded Cu topographies were produced by chemical mechanical polishing (CMP) and used for Cu pumping investigations. The amount of Cu pumping upon thermal annealing up to

400^{\circ} C

and cooling down to room temperature was precisely quantified. The SPM results were compared with FEM simulation results, and a numerical equation for Cu pumping was proposed, accordingly. It was shown that by using in-Situ SMP imaging, valuable information on the behavior of hybrid Cu / dielectric surfaces can be generated.

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Key words

Cu pumping,SPM,Nanoindentation,Hybrid bonding,Cu Extrusion,TSV,BEOL,CMP

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【要点】：本文通过在高温下使用原位扫描探针显微术（SPM）成像研究了Cu/SiO2混合键合过程中的Cu泵送现象，提出了Cu泵送的数值方程，为混合键合过程的可靠性和缺陷处理提供了重要信息。

【方法】：采用原位SPM成像技术，对经过化学机械抛光（CMP）处理形成的具有凹凸Cu形貌的Cu/SiO2表面在热退火过程中的Cu泵送现象进行定量分析。

【实验】：通过热退火至400°C并冷却至室温的过程，对Cu泵送量进行了精确量化，并将实验结果与有限元方法（FEM）模拟结果进行了对比，实验使用的数据集为CMP处理后的Cu/SiO2表面形貌。

Cu Pumping Analysis During Cu/SiO2 Hybrid Bonding Using In-Situ SPM Imaging

Cu Pumping Analysis During $Cu / {SiO}_{2}$ Hybrid Bonding Using In-Situ SPM Imaging