Cu Pumping Analysis During $\text{Cu}/\text{SiO}_{2}$ Hybrid Bonding Using In-Situ SPM Imaging
2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC)(2023)
摘要
The assessment of Cu pumping (also known as Cu extrusion) during thermal annealing is vital information for the successful execution of hybrid bonding as well as defect-free processing of the through silicon vias (TSV). Unpredicted Cu pumping can pose major reliability issues. Correspondingly, in this study, high-temperature analysis of Cu pumping was conducted utilizing in-situ scanning probe microscopic (SPM) imaging. Cu /
$\text{SiO}_{2}$
surfaces with recessed and protruded Cu topographies were produced by chemical mechanical polishing (CMP) and used for Cu pumping investigations. The amount of Cu pumping upon thermal annealing up to
$400^{\circ}\mathrm{C}$
and cooling down to room temperature was precisely quantified. The SPM results were compared with FEM simulation results, and a numerical equation for Cu pumping was proposed, accordingly. It was shown that by using in-Situ SMP imaging, valuable information on the behavior of hybrid Cu / dielectric surfaces can be generated.
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关键词
Cu pumping,SPM,Nanoindentation,Hybrid bonding,Cu Extrusion,TSV,BEOL,CMP
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