On the influence of annealing on the compositional and crystallographic properties of sputtered Li-Al-O thin films

A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850C) and durations (1 min to 7 h) on crystallinity and composition of the films. XPS depth profiling revealed inhomogeneous compositional depth profiles with Li contents increased toward the film surface and Al contents toward the film-substrate interface. These depth profiles were confirmed by a combination of RBS and D-NRA. At annealing temperatures of 550C and higher, Li reacted with the Si substrate. At the same time, temperatures of 550C and higher enabled the formation of crystalline LiAlO2, whereas at lower temperatures, no crystalline Li-Al-O phases were detected with XRD. In contrast to conventional annealing in a tube furnace (3 to 7 h durations), rapid thermal annealing with fast heating/cooling rates of 10C/min and durations of 1 to 10 min resulted in homogeneous depth profiles, while also leading to crystalline LiAlO2.