Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S₆ ^2- Relaxation

Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of S-n(2-) relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on S-n(2-) relaxation are still ambiguous. In this work, ionic [Zn(S-6)(2)Zn-2(Bipy)(2)SO4 (1), Zn(S-6)(2)Zn(Pmbipy)(3) (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)(2) (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S-6(2-) relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6 '-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S-6(2-) anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 degrees C, which has been verified by elongated S-S lengths and the strengthened C-HS hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.