Quantum dot-induced photoluminescence enhancement of InGaN nanowires

In this work, we propose a simple method to enhance the photoluminescence of InGaN nanowires using CdSe/ZnS colloidal quantum dots. It is found that decoration the surface of InGaN NWs with QDs leads to an increase in the integral and peak photoluminescence intensity by more than 3 times. The observed enhancement is attributed to the nonradiative energy transfer between quantum dots and nanowires.