Exploring miscut angle influence on (100) -Ga₂O₃ homoepitaxial films growth: Comparing MOVPE growth with MBE approaches

In this work, we explored the growth regime of (100) beta-Ga2O3 homoepitaxial films on substrates with different miscut angles (1 degrees, 2 degrees, and 4 degrees) in the MOVPE system. Under a low O-2/Ga ratio growth condition, step-flow growth of (100) beta-Ga2O3 homoepitaxial films can be maintained up to 3 mu m on substrates with different miscut angles. Moreover, the results reveal that the growth rate decreases slightly with decreasing miscut angles, which matches estimation of the Burton-Cabrera-Frank theory and can be explained by the model of adsorption-desorption. By comparing the miscut-dependent growth rates, we give experimental evidence on the fundamental difference between the growth of (100) beta-Ga2O3 films by MOVPE and MBE. In addition, a transport model is proposed to explain the desorption process in terms of the boundary layer and the kinetic resistance.