Effect of water vapor desorption on the performance of gallium nitride field emitter array

We are exploring the potential of gallium nitride (GaN) field emitter arrays in vacuum channel transistors. This study investigated the impact of ultraviolet (UV) light on the emission properties of large arrays of GaN field emitters. Arrays of 150 x 150 emitters were analyzed before and after UV exposure. With a constant collector voltage of 200 V DC, gate voltage sweeps from 0 to 60 V were applied. The initial I-V measurements showed a rapid increase in emission current, indicating a conditioning effect, settling at a stable value of 1.25 mu A after three to five sweeps. Remarkably, exposure to UV light resulted in a fivefold increase in the maximum field emission current, reaching an impressive 6 mu A. This significant enhancement highlights the potential of UV treatment for improving the performance of GaN-based field emitters. This surge in current can be attributed to the desorption of water vapor caused by the UV light. To compare with the heating-based water desorption technique, another array of 150 x 150 emitters was characterized before and after heating at 400 C-degrees. While the collector voltage remained constant at 200 V DC, the gate voltage was systematically increased from 0 to 75 V in this experiment. This controlled sweeping of the gate voltage provided a precise method for characterizing the field emission properties of the GaN emitters. The I-V measurements revealed that, similar to the UV exposure case, collector current increased by approximately four times after heat treatment at 400 C-degrees for 10 min. This resulted in a maximum field emission current of around 10 mu A at 75 V. As with the UV case, this increase can also be attributed to surface desorption, primarily of water.