Interlayer ferroelectric polarization modulated anomalous Hall effects in four-layer MnBi2Te4 antiferromagnets
arxiv(2024)
摘要
Van der Waals (vdW) assembly could efficiently modulate the symmetry of
two-dimensional (2D) materials that ultimately governs their physical
properties. Of particular interest is the ferroelectric polarization being
introduced by proper vdW assembly that enables the realization of novel
electronic, magnetic and transport properties of 2D materials. Four-layer
antiferromagnetic MnBi2Te4 (F-MBT) offers an excellent platform to explore
ferroelectric polarization effects on magnetic order and topological transport
properties of nanomaterials. Here, by applying symmetry analyses and
density-functional-theory calculations, the ferroelectric interface effects on
magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the
F-MBT are analyzed. Interlayer ferroelectric polarization in F-MBT efficiently
violates the PT symmetry (the combination symmetry of central inversion (P) and
time reverse (T) of the F-MBT by conferring magnetoelectric couplings, and
stabilizes a specific antiferromagnetic order encompassing a ferromagnetic
interface in the F-MBT. We predict that engineering an interlayer polarization
in the top or bottom interface of F-MBT allows converting F-MBT from a trivial
insulator to a Chern insulator. The switching of ferroelectric polarization at
the middle interfaces results in a direction reversal of the quantum anomalous
Hall current. Additionally, the interlayer polarization of the top and bottom
interfaces can be aligned in the same direction, and the switching of
polarization direction also reverses the direction of anomalous Hall currents.
Overall, our work highlights the occurrence of quantum-transport phenomena in
2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are
absent in the bulk or thin-film in bulk-like stacking forms of MnBi2Te4.
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