230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS

Christian Hoyer,Luca Steinweg,Florian Protze, Franz Alwin Duerrwald,Tilo Meister,Frank Ellinger

2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF(2024)

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摘要
This study presents an analysis of an energy efficient signal generator designed to enable short-range wireless data links for innovative base station architectures. The focus of this research is to achieve efficient frequency generation at 230 GHz using 130nm SiGe BiCMOS technology. The circuit consists of a 57.5GHz fundamental oscillator followed by subsequent stages that quadruple the output frequency. The implemented design achieves an operating range from 208.7 GHz to 253.2 GHz with a maximum output power of 1.81 dBm. The DC-to-RF efficiency of the signal generator is measured to be 2.16 %, which is competitive with other signal generators in SiGe BiCMOS technology operating in this frequency range.
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关键词
Terms-Oscillators,frequency synthesis,voltage-controlled oscillator,quadrupler,millimeter wave,Sub-THz,BiCMOS integrated circuits,SiGe
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