Heterostructure Vertical p-i-n GeSn Light-Emitting Diodes on Silicon-on-Insulator for 2µm Wavelength Band

2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)（2022）

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摘要

We report on GeSn vertical p-i-n heterostructure light-emitting diode grown on silicon-on-insulator platform. Room-temperature electroluminescence spectra were demonstrated. These results pave the pathway for efficient on-chip light sources for integrated photonics in 2µm wavelength band.

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关键词

Light-emitting Diodes,Electroluminescence Spectra,Conduction Band,Emission Peak,Group IV,Direct Gap,Molecular Beam Epitaxy,Cavity Mode

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