Low Power and High Linear, Low Noise Amplifier Designed in 22nm FDSOI Technology for 5G Wireless Systems

Marzieh Mollaalipouramir,Koen Buisman,Christian Fager,Herbert Zirath

2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC(2023)

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摘要
The focus of this paper is to present a low-power and high-performance LNA design, implemented in 22nm FDSOI process for fifth generation (5G) communication systems. The LNA employs an inductively degenerated common source topology with a cascode device. At a frequency of 28GHz, the LNA achieves a gain of 12.4dB and an input-referred third-order intercept point (IIP3) of 2.4dBm. The LNA has a 3-dB bandwidth of 14GHz, a minimum noise figure (NF) of 2.2dB at 28GHz, and a power dissipation (PDC) of 7.2mW.
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关键词
FD-SOI,22-nm CMOS,millimeter-wave integrated circuits,low noise amplifiers (LNAs)
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