Growth of vertical type InSe/TMDs heterostructures for efficient charge transfer and nonlinear optical performance

Shan-Shan Kan, Yu-Xin Liu, Ming-Kun Jiang, Shi-Xuan Deng, Zhe-Kun Ren, Xiao-Meng Jiang,Cheng-Bao Yao

Applied Surface Science(2024)

引用 0|浏览0
暂无评分
摘要
Indium selenide (InSe) nanofilms with high carrier mobility and tunable band structure are a typical III-VI group two-dimensional semiconductor material, which has attracted extensive attention in the field of microelectronics and optoelectronic materials. However, due to a large number of interface defects and low efficiency of internal photogenerated charge separation in two-dimensional materials, it is difficult to achieve efficient photoelectric conversion and slow down the carrier decay rate. Here, a two-step magnetron sputtering method was used to synthesize ε-InSe/transition metal dichalcogenides (TMDs) (MX2: M = W, Mo; X = Se, S) heterojunctions films. The electronic transitions and exciton relaxation mechanisms in linear and nonlinear absorption of ε-InSe/TMDs heterojunctions films under light excitation were analyzed. The charge transfer and orbital contribution of ε-InSe/TMDs heterojunctions were discussed. The electromagnetic field changes of InSe/TMDs heterojunctions were simulated. The formation of type II InSe/TMDs heterostructures effectively separates photo-generated electrons and holes, increases the lifetime of carriers, and is of great significance for understanding the physical contact behavior between TMDs and TMDs semiconductors and promoting their applications in optoelectronic devices.
更多
查看译文
关键词
ε-InSe/TMDs heterojunctions,Magnetron sputtering,Charge transfer,Nonlinear optics,Finite-difference time-domain,Density functional theory
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要