Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon

In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch process. The performance of the 3DCESD device is influenced by the structural parameter ${S}$ . Comparative simulations were conducted using TCAD. The overall electric field and weighting potential of 3DCESD are significantly optimized. MIP and continuous pulse laser were performed separately under bias voltages of -50V and -5V. The 3DCESD exhibits notable advantages, including rapid response speed, high charge collection efficiency, minimal inhomogeneity, and low power consumption.