Sputtering pressure dependence of microstructure and magnetoresistance properties of non-uniform Co-ZnO nanocomposite film

Co-ZnO metal-semiconductor nanocomposite films have become the focus of attention in recent years since their magnetoresistance (MR) effect at room temperature (RT). In this study, non-uniform Co-ZnO nanocomposite films were prepared by magnetron co-sputtering method. With sputtering pressure increasing, the formation of ferromagnetic Co clusters is suppressed effectively, and the metallic-state superparamagnetic Co particles are dispersed, which form the tunneling transport paths in the Co-ZnO films at high Co content. As the sputtering pressure increases from 0.3 Pa to 1.2 Pa, the RT -MR value of the films increases from 0.41 % to 11.85 %, and the saturation magnetization of the films rises from 6.3 kGs to 7.3 kGs and then decreases to 6.7 kGs. It is noteworthy that the low-field MR field sensitivity at 1000 Oe is enhanced by about 10 times from 0.5 Pa to 1.2 Pa. This provides a reference for the application of low-magnetic field detectors.