The impact of gamma rays on the structure, optical, electrical, and DFT of tin (II) 2,3-naphthalocyanine dye thin films for photonic and organic solar cell applications

The study focuses on examining the effects of gamma rays on various aspects of tin (II) 2,3-naphthalocyanine (SnNC) thin films. These aspects include the structure, optical properties, electrical characteristics, and density functional theory (DFT) analysis. The purpose is to understand how gamma irradiation influences the behavior and properties of SnNC thin films. The technique employed for the deposition of SnNC thin films onto pre-cleaned glass substrates involves the use of high vacuum thermal evaporation. The infrared spectral bands of the as-prepared SnNC dye were identified and assigned using FTIR spectroscopy. The microstructural properties of SnNC thin films were examined under different doses of gamma irradiation (0.0, 10, 20, 30, 40, and 50 kGy). This analysis was conducted using techniques such as X-ray diffraction (XRD), high-resolution transmittance electron microscopy (HR-TEM), and electron diffraction pattern (EDP). Optical measurements of SnNC thin films were conducted to evaluate transmission (T(lambda)), reflection, (R(lambda)), and absorbance (A(lambda)) characteristics. Both SnNC thin films as-prepared and those exposed to gamma radiation were analyzed in this study. To determine the optical energy gaps of both as-prepared SnNC thin films and those exposed to gamma radiation, Tauc's method and absorption spectrum fitting (ASF) techniques were employed. The study reported enhancements in the refractive index, specific polarizability, and third-order nonlinear optical susceptibility of SnNC thin films when exposed to gamma-irradiation. The dc electrical activation energy (Delta E) of SnNC thin films was determined before and after gamma irradiation using the Arrhenius plot method. The objective is to explore the potential use of these films in various applications, including dosimetry, optical energy, and organic solar cells.