Efficient polarization-insensitive quasi-BIC modulation by VO2 thin films

Bound states in the continuum (BIC) offer great design freedom for realizing high -quality factor metasurfaces. By deliberately disrupting the inherent symmetries, BIC can degenerate into quasi-BIC exhibiting sharp spectra with strong light confinement. This transformation has been exploited to develop cutting -edge sensors and modulators. However, most proposed quasi-BICs in metasurfaces are composed of unit cells with Cs symmetry that may experience performance degradation due to polarization deviation, posing challenges in practical applications. Addressing this critical issue, our research introduces an innovative approach by incorporating metasurfaces with C4v unit cell symmetry to eliminate polarization response sensitivity. Vanadium Dioxide (VO2) is a phase -change material with a relatively low transition temperature and reversibility. Here, we theoretically investigate the polarizationinsensitive quasi-BIC modulation in Si-VO2 hybrid metasurfaces. By introducing defects into metasurfaces with Cs, C4, and C4v symmetries, we enable the emergence of quasi-BICs characterized by strong Fano resonance in their transmission spectra. Via numerically calculating the multipole decomposition, distinct dominant multipoles for different quasi-BICs are identified. A comprehensive investigation into the polarization responses of these structures under varying directions of linearly polarized light reveals the superior polarization -independent characteristics of metasurfaces with C4 and C4v symmetries, a feature that ensures the maintenance of maximum resonance peaks irrespective of polarization direction. Utilizing the polarization -insensitive quasi-BIC, we thus designed two different Si-VO2 hybrid metasurfaces with C4v symmetry. Each configuration presents complementary benefits, leveraging the VO2 phase transition's loss change to facilitate efficient modulation. Our quantitative calculation indicates notable achievements in modulation depth, with a maximum relative modulation depth reaching up to 342%. For the first time, our research demonstrates efficient modulation using polarization -insensitive quasi-BICs in designed Si-VO2 hybrid metasurfaces, achieving identical polarization responses for quasi-BIC-based applications. Our work paves the way for designing polarization -independent quasi-BICs in metasurfaces and marks a notable advancement in the field of tunable integrated devices.