Structural, dielectric, and optical properties in Mn-modified CaSnO₃

The CaSn0.95Mn0.05O3 (CSMO) was produced by using the sol-gel wet chemical process. The structural composition was examined using an X-ray diffraction (XRD) pattern, and the presence of an orthorhombic structure with the space group Pbnm was confirmed by Rietveld refinement. At different temperatures between 300 K and 773 K, the dielectric permittivity (epsilon), tangent losses (tan delta), and electrical conductivity of CSMO has been measured as a function of frequency from 100 Hz to 1 MHz .Dielectric permittivity (epsilon) is found to be independent of temperature up to 400K and very low tangent loss. Jonscher's power law in the material's frequency-dependent ac conductivity shows its semiconductor nature. Optical band gap of CSMO was observed by using UV-vis .absorption spectra. The optical band gap of CSMO, which was determined using Tauc plot measurements to be 2.42 eV, suggests that the sample is a semiconductor. The Arrhenius model is employed to perform an analysis of the dc conductivity of the material concerning both frequency and temperature. As a result of its semiconductivity, stable dielectric constant, and low tangent loss, CSMO is a suitable material for thermally stable capacitors, semiconductor devices, UV filter and UV detectors.