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Influence of Net Doping Concentration on Carrier Lifetime in 4H-Sic Substrates

Journal of Electronic Materials(2024)SCI 4区

Shandong University

Cited 0|Views18
Abstract
Lightly nitrogen-doped (N-doped) and vanadium-doped (V-doped) 4H-SiC single crystals grown by physical vapor transport were used to investigate the effect of net doping concentration on carrier lifetime. The carrier lifetime in N-doped and V-doped 4H-SiC substrates was measured using microwave photoconductance decay. The resistivity mapping of the 4H-SiC wafers was measured using a contactless eddy current to reveal the relationship between resistivity and net doping concentration. Raman spectroscopy and secondary ion mass spectroscopy were recorded to determine the carrier concentration and impurity distribution. The results show that the net N doping concentration, expressed by N D − N A (donor nitrogen compensated by acceptor boron and aluminum), was responsible for carrier lifetime in N-doped 4H-SiC substrate. For V-doped 4H-SiC substrates, the experimental details clearly demonstrated that the carrier time was affected not only by V concentration ( N V ), but also by the shallow level impurity concentration. When N D − N A > N V , the net V 1 doping concentration expressed by ( N D – N A ) − N V determined the carrier lifetime. The net V 2 doping concentration expressed by N V − ( N D − N A ) determined the carrier lifetime when N V > N D − N A , and the carrier lifetime decreased with increasing net V 2 impurity concentration. The maximum carrier lifetime was obtained when N D − N A ≈ N V .
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SiC,carrier lifetime,impurity distribution,net N doping concentration,net V doping concentration
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要点】:论文探讨了净掺杂浓度对4H-SiC衬底中载流子寿命的影响,发现氮掺杂和钒掺杂的4H-SiC单晶中,载流子寿命受净掺杂浓度(ND - NA 和 NV)的控制,并揭示了不同条件下载流子寿命与净掺杂浓度之间的关系。

方法】:采用微波光导衰减法测量氮掺杂和钒掺杂4H-SiC衬底的载流子寿命,用无接触涡流法测量4H-SiC晶片的电阻率映射,利用拉曼光谱和二次离子质谱技术确定载流子浓度和杂质分布。

实验】:实验结果表明,在氮掺杂的4H-SiC衬底中,载流子寿命主要由净氮掺杂浓度(ND - NA)决定;在钒掺杂的4H-SiC衬底中,载流子寿命不仅受钒浓度(NV)影响,还受到浅能级杂质浓度的制约。当ND - NA > NV时,载流子寿命由净V1掺杂浓度(ND - NA - NV)决定;当NV > ND - NA时,载流子寿命由净V2掺杂浓度(NV - (ND - NA))决定,并随着净V2杂质浓度的增加而降低。当ND - NA ≈ NV时,可获得最大的载流子寿命。