Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
arxiv(2024)
摘要
As quantum computing hardware becomes more complex with ongoing design
innovations and growing capabilities, the quantum computing community needs
increasingly powerful techniques for fabrication failure root-cause analysis.
This is especially true for trapped-ion quantum computing. As trapped-ion
quantum computing aims to scale to thousands of ions, the electrode numbers are
growing to several hundred with likely integrated-photonic components also
adding to the electrical and fabrication complexity, making faults even harder
to locate. In this work, we used a high-resolution quantum magnetic imaging
technique, based on nitrogen-vacancy (NV) centers in diamond, to investigate
short-circuit faults in an ion trap chip. We imaged currents from these
short-circuit faults to ground and compared to intentionally-created faults,
finding that the root-cause of the faults was failures in the on-chip trench
capacitors. This work, where we exploited the performance advantages of a
quantum magnetic sensing technique to troubleshoot a piece of quantum computing
hardware, is a unique example of the evolving synergy between emerging quantum
technologies to achieve capabilities that were previously inaccessible.
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