Field-free switching in perpendicular Ta/CoFeB/MgO multilayers achieved by annealing temperature gradient

Current flowing through heavy metals generates spin current by the spin Hall effect (SHE), and spin current exerts a torque on the adjacent magnetic layer, thereby switching the magnetization direction of the magnetic layer. Normally, an external magnetic field must be used to break symmetry in the response to the SHE torque, to realize deterministic switching. However, the presence of magnetic fields increases the difficulty in integrating spintronic devices with complementary metal-oxide-semiconductor. Thus, field-free spin-orbit torque switching has been a research hotspot. Here, symmetry-breaking has been realized by tilting the sample during the annealing process, resulting in a non-uniform diffusion of Ta atoms in the samples along the temperature gradient (x-direction), which was confirmed by transmission electron microscope mapping. As a result, the sample has demonstrated deterministic switching, in the absence of an external magnetic field, with a switching ratio of up to 88% and the critical current density of 1.5 x 10(7) A/cm(2). Tilting annealing is a simple approach to achieve field-free switching.