Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture

Electrospinning-derived 1-D nanostructureshave received extensive attention and are considered asone of the most promising building blocks in the nextgeneration of electronic devices because of their excellentphysical and chemical properties. Among many 1-D can-didate materials, devices with In2O3as the active channel are of highly representative, but In2O3often leads to poor over all device performance due to its excessive carriercon centration. In current work, novel dual-channel field-effect transistors (FETs) based on electrospinning-drivenIn2O3and ZnSnO (ZTO) nanofibers have been constructed and controlled carrier concentration and improved deviceperformance has been detected. The experimental resultshave confirmed that In2O3/ZTO heterojunction FETshave demonstrated improved electrical performancecompared to single-channel-based FET device, which canbe attributed to the formation of 2-D electron gas (2DEG).To continue improving the electrical performance of FETsdevices, the adhesion between nanofibers and the frontchannel interface at In2O3/SiO2have been optimized byadding different volumes of ethanolamine (EA) to In2O3.As a result, it can be noted that the In2O3/ZTO heterojunc-tion nanofiber FETs with 40-mu L of EA have exhibited highersaturation field-effect mobility (mu sat) of 6.09 cm2V(-1)s(-1),a smaller subtreshold swing (SS) of 0.49 V/decade, a lower interfacial state density (Dit) of 7.24x10(11)cm(-2)eV(-1),and excellent device stability (1VTH=0.91 V). These findings further illustrated the remarkable progress ofelectrospinning-deriveddouble-channelheterojunctiontransistors toward practical applications of low-cost andhigh-performance electronics in future.