Electrical transport crossover and large magnetoresistance in selenium deficient van der Waals HfSe2-x
arxiv(2024)
摘要
Transition metal dichalcogenides have received much attention in the past
decade not only due to the new fundamental physics, but also due to the
emergent applications in these materials. Currently chalcogenide deficiencies
in TMDs are commonly believed either during the high temperature growth
procedure or in the nanofabrication process resulting significant changes of
their reported physical properties in the literature. Here we perform a
systematic study involving pristine stochiometric HfSe2, Se deficient HfSe1.9
and HfSe1.8. Stochiometric HfSe2 transport results show semiconducting behavior
with a gap of 1.1eV. Annealing HfSe2 under high vacuum at room temperature
causes the Se loss resulting in HfSe1.9, which shows unconventionally large
magnetoresistivity following the extended Kohler's rule at low temperatures
below 50 K. Moreover, a clear electrical resistivity crossover, mimicking the
metal-insulator transition, is observed in the HfSe1.9 single crystal. Further
increasing the degree of deficiency in HfSe1.8 results in complete metallic
electrical transport at all temperatures down to 2K. Such a drastic difference
in the transport behaviors of stoichiometric and Se-deficient HfSe2 further
emphasizes that defect control and engineering could be an effective method
that could be used to tailor the electronic structure of 2D materials,
potentially unlock new states of matter, or even discover new materials.
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